inchange semiconductor isc rf product specification isc website www.iscsemi.cn 1 isc silicon npn rf transistor 2SC5090 description high gain bandwidth product f t = 10 ghz typ. high gain, low noise figure s 21e 2 = 13 db typ., nf = 1.1 db typ @ f = 1 ghz applications designed for vhf~uhf band low no ise amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 20 v v ceo collector-emitter voltage 10 v v ebo emitter-base voltage 1.5 v i c collector current-continuous 40 ma i b base current-continuous 20 ma p c collector power dissipation @t c =25 0.1 w t j junction temperature 125 t stg storage temperature range -55~125
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 2 isc silicon npn rf transistor 2SC5090 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit i cbo collector cutoff current v cb = 10v; i e = 0 1 a i ebo emitter cutoff current v eb = 1v; i c = 0 1 a h fe dc current gain i c = 20ma ; v ce = 8v 50 160 s 21e 2 insertion power gain i c = 20ma;v ce = 8v; f= 1ghz 10 13 db s 21e 2 insertion power gain i c = 20ma;v ce = 8v; f= 2ghz 7 db f t current-gain?bandwidth product i c = 20ma ; v ce = 8v 7 10 ghz c ob output capacitance i e = 0 ; v cb = 10v;f= 1.0mhz 0.7 pf c re feedback capacitance i e = 0 ; v cb = 10v;f= 1.0mhz 0.5 0.95 pf nf noise figure i c = 5ma ; v ce = 8v; f= 1ghz 1.1 2.5 db nf noise figure i c = 5ma ; v ce = 8v; f= 2ghz 1.7 db ? h fe classification r o 50-100 80-160
inchange semiconductor isc rf product specification 3 isc website www.iscsemi.cn isc silicon npn rf transistor 2SC5090
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 4 isc silicon npn rf transistor 2SC5090 s-parameter v ce = 8 v, i c = 5 ma, z o = 50 freque . s 11 s 21 s 12 s 22 mhz mag. ang. mag. ang. mag. ang. mag. ang. 200 0.683 -50.1 10.186 138. 3 0.049 62.0 0.773 -30.0 400 0.462 -86.9 7.472 114. 6 0.071 54.3 0.556 -39.6 600 0.343 -113.1 5.618 100. 9 0.086 53.8 0.448 -41.7 800 0.282 -133.6 4.407 91. 7 0.101 55.3 0.392 -41.6 1000 0.249 -151.0 3.663 84.7 0,115 57.2 0.360 -41.7 1200 0.236 -166.6 3.128 78. 7 0,131 58.9 0.339 -41.7 1400 0.233 179.7 2.759 73.1 0.150 60.1 0.330 -42.8 1600 0.234 168.3 2.457 68.2 0,168 60.0 0.319 -45.0 1800 0.238 158.6 2.224 63.4 0.185 60.0 0.311 -47.9 2000 0.251 149.6 2.038 59.4 0,203 60.4 0.302 -50.2
inchange semiconductor isc rf product specification 5 isc website www.iscsemi.cn isc silicon npn rf transistor 2SC5090 v ce = 8 v, i c = 20 ma, z o = 50 freque . s 11 s 21 s 12 s 22 mhz mag. ang. mag. ang. mag. ang. mag. ang. 200 0.319 -91.9 18.383 126. 7 0.033 65.3 0.494 -43.5 400 0.213 -134.2 10.303 99. 2 0.054 68.9 0.312 -42.4 600 0.185 -160.0 7.111 90. 3 0.076 70.8 0.258 -37.6 800 0.176 -178.2 5.415 84. 3 0.098 71.2 0.236 -34.3 1000 0.174 167.8 4.400 79.2 0,120 71.1 0.228 -32.0 1200 0.178 156.8 3.712 74.8 0,143 70.3 0.226 -31.5 1400 0.186 147.5 3.236 70.3 0.168 68.7 0.226 -32.8 1600 0.194 139.7 2.874 66.3 0,190 66.6 0.223 -35.9 1800 0.199 133.7 2.583 62.6 0.211 64.9 0.216 -39.0 2000 0.215 127.8 2.369 58.8 0,232 63.5 0.211 -41.9
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 6 isc silicon npn rf transistor 2SC5090
inchange semiconductor isc rf product specification 7 isc website www.iscsemi.cn isc silicon npn rf transistor 2SC5090
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